Structural and Morphological Properties of 3,4,9,10-PeryleneTetraCarboxylic DiAnhydride Films on Passivated GaAs(100) Substrates

June 24, 2017 | Autor: Thorsten Kampen | Categoría: Materials Engineering, Condensed Matter Physics, Polymorphism, Organic Semiconductors, Raman Spectroscopy, Atomic Force Microscopy, Lattice Parameter, Structural Properties, Polycrystalline thin films, Raman Spectra, Atomic Force Microscopy, Lattice Parameter, Structural Properties, Polycrystalline thin films, Raman Spectra

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Synthetic Metals 154 (2005) 165–168

0379-6779/$ – see front matter © 2005 Elsevier B.V. All rights reserved. doi:10.1016/j.synthmet.2005.07.042

G. Salvan et al. / Synthetic Metals 154 (2005) 165–168

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G. Salvan et al. / Synthetic Metals 154 (2005) 165–168

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G. Salvan et al. / Synthetic Metals 154 (2005) 165–168

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Structural and Morphological Properties of 3,4,9,10-PeryleneTetraCarboxylic DiAnhydride Films on Passivated GaAs(100) Substrates

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