SEMICONDUCTOR KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR Revision No : 0

SEMICONDUCTOR

KHB2D0N60P/F/F2

TECHNICAL DATA

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description

KHB2D0N60P A

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies.

O C F

E

DIM MILLIMETERS _ 0.2 9.9 + A

G B

15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 +

B

Q

C

I

D E

K

FEATURES

P M

H

VDSS= 600V, ID= 2.0A

J

RDS(ON)=5.0

I

D

Drain-Source ON Resistance : www.DataSheet4U.com

F G

L

J

N

H

N

@VGS = 10V

K

1.46

L

_ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 +

M

Qg(typ.) = 10.9nC

N O 1

MAXIMUM RATING (Tc=25

2

3

P

1. GATE 2. DRAIN 3. SOURCE

)

Q

RATING TO-220AB

KHB2D0N60F UNIT KHB2D0N60P KHB2D0N60F2

VDSS

600

V

Gate-Source Voltage

VGSS

30

V 2.0*

1.2

1.2*

8.0

8.0*

E

Tc=25

120

mJ

EAR

5.4

mJ

dv/dt

5.5

V/ns

L

M

0.43

0.18

W

R

D N

23

1

N

2

H

3

PD

Derate above25

Maximum Junction Temperature Storage Temperature Range

Tj

150

Tstg

-55 150

_ 0.2 4.7 + _ 0.2 2.76 +

1. GATE 2. DRAIN 3. SOURCE

W/

TO-220IS (1) KHB2D0N60F2

Thermal Characteristics A

RthJC

2.32

5.5

C

/W

F

Thermal Resistance, Junction-to-Case

RthCS

0.5

-

/W

E

Thermal Resistance, Junction-toAmbient

RthJA

G

B

Thermal Resistance, Case-to-Sink

P

S

62.5

62.5

/W K

* : Drain current limited by maximum junction temperature.

L

L

PIN CONNECTION

R

J

M D

D

D N

N

2

H

3

Q

1

G

DIM

MILLIMETERS

A B C D E F G H J K L M N P Q R S

_ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 12.0 + 0.3 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 4.5 + 0.2 _ 0.2 2.6 + 0.5 Typ

1. GATE 2. DRAIN 3. SOURCE

TO-220IS

S

2007. 5. 10

_ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + 13.0 MAX _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 +

A

EAS

54

MILLIMETERS

A B C D E F G H J K L M N O Q R

J

Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)

IDP

DIM

K

@TC=100 Pulsed (Note1)

Drain Power Dissipation

2.0 ID

Q

Drain Current

C

G

@TC=25

KHB2D0N60F A F

Drain-Source Voltage

O

SYMBOL

B

CHARACTERISTIC

Revision No : 0

1/7

KHB2D0N60P/F/F2

ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC

)

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

600

-

-

V

ID=250 A, Referenced to 25

-

0.65

-

Static BVDSS

Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient

BVDSS/ Tj

ID=250 A, VGS=0V

V/

Drain Cut-off Current

IDSS

VDS=600V, VGS=0V,

-

-

10

A

Gate Threshold Voltage

Vth

VDS=VGS, ID=250 A

2.0

-

4.0

V

Gate Leakage Current

IGSS

VGS=

-

-

-

3.8

5.0

-

10.9

12

-

1.7

3

-

5.0

5.5

-

-

28

-

-

60

-

-

58

www.DataSheet4U.com

RDS(ON)

Drain-Source ON Resistance

30V, VDS=0V

VGS=10V, ID=1.0A

100

nA

Dynamic Qg

Total Gate Charge Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-on Delay time

td(on)

VGS=10V

(Note4,5)

VDD=300V

tr

Turn-on Rise time

VDS=480V, ID=2.0A

RL=150 td(off)

Turn-off Delay time

RG=25

nC

ns (Note4,5)

Turn-off Fall time

tf

-

-

66

Input Capacitance

Ciss

-

388

504

Reverse Transfer Capacitance

Crss

-

6.5

8.5

Output Capacitance

Coss

-

46

59.4

-

-

2.0

-

-

8.0

VDS=25V, VGS=0V, f=1.0MHz

pF

Source-Drain Diode Ratings IS

Continuous Source Current

VGS