Estudio por microscopía electrónica y espectroscopía de infra-rojos de capas de SiC obtenidas mediante carburización de obleas de Si

The fabrication and characterization of thin SiC layers obtained by Rapid Thermal Chemical Vapour Deposition (RTCVD) are reported. These SiC layers were grown in a simple home-made system for Si wafers carbonization. The growth process was carried out using a mixture of H2 and C3H8 as the C precursor. (001) Si was carbonized at atmospheric pressure while (111) and (001)